在CF4/Ar的感应耦合等离子体中,用"法拉第筒"式的方法研究了SiO2刻蚀速率与不同离子入射角度之间的关系.在所施加的-20～300V射频偏压范围内,SiO2基片的归一化刻蚀速率(NER)呈现两种情况,当偏压值＜100V时,归一化刻蚀速率的大小与基片倾斜角度θ符合余弦曲线规律;当偏压值＞100V时,θ在15°～60°范围内,归一化刻蚀速率的大小在大于相应的余弦值,θ＞60°时归一化刻蚀速率快速下降,在90°附近SiO2表面出现聚合物沉积.θ＜60°时,SiO2的表面刻蚀主要决定于入射离子与基片表面间的能量转换,转换能量的大小深刻地影响着SiO2的刻蚀速率,同时也影响形成于基片表面的碳氟聚合物的去除速率.
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