使用80%Ar稀释的SiH4,O2,CHF3和CH4作为前驱气体,利用微波电子回旋共振等离子体化学气相沉积(ECR-CVD)方法制备了SiOx/a-C:F/SiOx多层膜.傅里叶变换红外测试结果表明了多层膜中存在大量的C-F,C=C,Si-O键,同时由于器壁的吸附效应,膜中还存在少量的Si-C和Si-F键,这些键的存在从x射线光电子能谱的深层剖析结果得到了证实.热退火的结果表明了薄膜的红外结构没有发生太大的变化,薄膜的介电常数经过400℃的退火后仅上升了8%.实验结果表明了ECR-CVD制备的SiOx/a-C:F/SiOx多层膜可以成为超大规模集成电路中层间绝缘层的候选材料.
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