对Ⅰ-型锗基笼形物的制备、晶体结构特别是热电性能等研究现状做了综述.Ⅰ-型锗基笼形物半导体是具有"声子玻璃、电子晶体"特性的热电材料.它具有笼子状的晶体结构,这种独特的框架结构决定了其具有良好的电性能,而通过填充合适的碱土金属或稀土金属原子到其笼子状的空隙中则可以大大降低体系的热导率,因而是很具希望的热电材料体系.要进一步提高该体系的热电性能,必须在优化填充原子的同时优化框架原子.
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