为了得到CeO2为埋层的新型SOI(Silicon On Insulator)材料,采用电子束蒸发沉积及后期退火处理的方法制备得到了高度(111)、(311)晶体取向的CeO2薄膜,为进一步外延制备SOI材料打下了良好的基础.同时,从热力学角度就退火对CeO2薄膜晶体取向的影响机理进行了初步的探讨.由于CeO2(11)、(311)面为密排面和次密排面,在结晶化过程中所需克服的能垒最低和次低,所以,退火后形成了(111)、(311)结构的CeO2薄膜.
参考文献
| [1] | Inoue T;Yamamoto Y;Koyama S et al.Epitaxial growth of CeO2 layers on silicon[J].Applied Physics Letters,1990,56(14):1332. |
| [2] | Chikyow T;Bedair S M;Tye L et al.Reaction and regrowth control of CeO2 on Si (111) surface for the siliconon-insulator structure[J].Applied Physics Letters,1994,65(08):1030. |
| [3] | Nakazawa T;Inoue T;Satoh M et al.Electrical Characteristics of Metal/Cerium Dioxide/Silicon Structures[J].Japanese Journal of Applied Physics,1995(34):548. |
| [4] | Inoue T;Ohsuna T;Lue L et al.Growth of (110)oriented CeO2 layers on (100) silicon substrates[J].Applied Physics Letters,1991(59):3604. |
| [5] | Yoshimoto M;Nagata H;Tsukahara T et al.In Situ RHEED Observation of CeO2 Film Growth on Si by Laser Ablation Deposition in Ultrahigh-Vacuum[J].Japanese Journal of Applied Physics,1990,29(07):L1199. |
| [6] | Inoue T;Osone M;Tohda H et al.Low-temperature epitaxial growth of cerium dioxide layers on (111) silicon substrates[J].Journal of Applied Physics,1991,69(12):8313. |
| [7] | Mao Y J;Liu X H;Zhang F.Hardness evaluation of thin ceramic coatings on tool steel[J].Surface and Coatings Technology,1998(103-104):78. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%