采用ta-C薄膜用于SOI结构中的绝缘层,在高温高功率器件中有很大的应用潜力.应用真空磁过滤弧源沉积(FAD)的方法制备了ta-C薄膜.通过AFM、non-RBS、IR、I-V、C-V等方法对薄膜的表面形貌、微观结构和电学性能进行了研究.研究表明,ta-C薄膜的sp3键含量高达87%,且具有很高的表面光洁度(粗糙度低于0.5nm)及较好的电绝缘性能,击穿场强达到4.7MV/cm.
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