报道了一种可靠稳定且低接触电阻的 n型 GaN欧姆接触.首先在掺硅的 n型 GaN (3?10 18cm-3)蒸镀 Ti(30nm)/Al(500nm), 然后在氮气环境 530℃合金化 3min, 最后蒸镀Ti(100nm)/Au(1000nm)用于保护 Al层不被氧化。该接触电极有良好的欧姆接触特性,比接触电阻率为 8.8?10-5 Ω cm2,表面平坦、稳定、易焊线 ,可应用于制作高性能的 GaN器件.
参考文献
| [1] | Nakamura S;Senoh M;Iwasa N et al.High-Brightness InGaN blue,green and yellow light-emitting diodes with quantum well structures[J].Japanese Journal of Applied Physics,1995,34:L797. |
| [2] | Nakamura S;Senoh M;Iwasa N et al.Superbright green InGaN single-quantum-well-structure light-emitting diodes[J].Japanese Journal of Applied Physics,1995,34:L1332. |
| [3] | Nakamura S;Senoh M .High-power GaN p-n junction blue-light-emitting diodes[J].Japanese Journal of Applied Physics,1991,30:L1998. |
| [4] | Nakamura S;Senoh M;Nagahama S et al.InGaN MQW structure laser diodes with cleaved mirror facets[J].Japanese Journal of Applied Physics,1996,35:L217. |
| [5] | Khan M A;Olson D T;Hove Van J M et al.Vertical-cavity,room-temperature stimulated emission from photo-pumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor deposition[J].Applied Physics Letters,1991,58:1515. |
| [6] | Khan M A;Kuznia J N;Bhattarai A R et al.Metal semiconductor field effect transistor bassed on single crystal GaN[J].Applied Physics Letters,1993,62:1786. |
| [7] | Lin M E;Ma Z;Huang F Y et al.Low resistance ohmic contacts on wide band-gap GaN[J].Applied Physics Letters,1994,64:1003. |
| [8] | Fan Z F;Mohammad S N;Kim W et al.Very low resistance multilayer ohmic contact to n-GaN[J].Applied Physics Letters,1996,68:1672. |
| [9] | Lee C T;Kao H W .Long term thermal stability of Ti/Al/ Pt/Au ohmic contact to n-type GaN[J].Applied Physics Letters,2000,76:2364. |
| [10] | Wang DF.;Lu C.;Motayed A.;Jah M.;Mohammad SN.;Jones KA. Salamanca-Riba L.;Feng SW. .Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN[J].Journal of Applied Physics,2001(11 Pt.1):6214-6217. |
| [11] | Reeves G K;Harrison H B .Obtaining the specific contact resistance from transmission line model measurement[J].IEEE Transactions on Electron Devices,1982,EDL-3:111. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%