CoSnS2薄膜的制备及性能研究

功能材料与器件学报 , 2003, 9(3): 247-252. doi: 10.3969/j.issn.1007-4252.2003.03.003

CoSnS2薄膜的制备及性能研究

杜金会 ^1, , 于振瑞 ^2, , 王如 ^3, , 张加友 ^4, , 王旭艳 ^5, , 李正群 ^6,

1.军事交通学院,基础部,天津,300161

2.军事交通学院,基础部,天津,300161

3.河北工业大学,材料学院,天津,300130

4.军事交通学院,基础部,天津,300161

5.军事交通学院,基础部,天津,300161

6.军事交通学院,基础部,天津,300161

基金项目: 国家自然科学基金(50172061)

关键词： CoSnS2薄膜 , 两步电沉积法 , 三元共沉积法 , 结构特性 , 光学特性

Study on the preparation and their properties of CoSnS2 thin films

采用两种方法制备了 CoSnS2薄膜.在两步电沉积法中,先沉积 SnS薄膜,再在其上制备CoS沉积薄膜,最后进行退火处理形成厚度约为 1250nm的 CoSnS2薄膜.在三元共沉积法中,加入EDTA(乙二胺四乙酸二钠 )配合剂来调整 Sn、 Co、 S的沉积电势以实现这三种元素的共沉积,从而一步形成厚约 620nm的 CoSnS2薄膜.探讨了薄膜的制备机理和制备条件对薄膜结构特性和光学特性的影响.得到的薄膜为多晶γ-Co6S5(立方晶系)和 SnS(斜方晶系)结构,其直接光学带隙和间接光学带隙分别在 1.05～1.25eV和 0.11～0.71eV之间可调.

参考文献

[1]	Nair PK.;Garcia VM.;Arenas OL.;Pena Y.;Castillo A.;Ayala IT.;Gomezdaza O.;Sanchez A.;Campos J.;Hu H.;Suarez R.;Rincon ME.;Nair MTS. .Semiconductor thin films by chemical bath deposition for solar energy related applications[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,1998(3/4):313-344.
[2]	Savadogo O. .Chemically and electrochemically deposited thin films for solar energy materials[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,1998(3/4):361-388.
[3]	Hironori KATGIRI;Naoya ISHIGAKI;Takeshi ISHIDA et al.Characterization of Cu2ZnSnS4 thin films prepared by vapor phase sulfurization[J].Japanese Journal of Applied Physics,2001,40:500-504.
[4]	Sekhar C. Ray;Malay K. K aranjai;Dhruba DasGupta .Structure and photoconductive properties of dip-deposited SnS and SnS_2 thin films and their conversion to tin dioxide by annealing in air[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1999(12):72-78.
[5]	安茂忠;王久林;杨哲龙等.电沉积方法制备功能性金属化合物薄膜[J].功能材料,1999,30(06):585-587.
[6]	Basu P K;Pramanik P .Solution growth technique for the deposition of cobalt sulphide thin film[J].Journal of Materials Science Letters,1986,5:1216-1218.
[7]	Yu Zhenrui;Du Jinhui;Guo Shuhua et al.CoS Thin Films Prepared by Modified Chemical Bath Deposition[J].Thin Solid Films,2002,415:173-176.
[8]	杜金会,于振瑞,张加友,杨嘉,郭淑华.电沉积法制备SnS薄膜[J].光电子·激光,2002(09):889-892.
[9]	杜金会,于振瑞,王旭艳,张加友,贾小东,郭淑华.电沉积法制备CoS薄膜[J].光电子·激光,2002(12):1215-1218.

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CoSnS2薄膜的制备及性能研究

Study on the preparation and their properties of CoSnS2 thin films

参考文献