采用阳极氧化工艺制备理想绝缘金属基板阳极氧化绝缘层.利用激光干涉法测量阳极氧化 膜层在热冲击过程中的开裂温度.研究了铝板表面不同前处理工艺对金属基板绝缘层热开裂温度 的影响,利用扫描电子显微镜( SEM)观察裂纹萌生的位置 ,结果表明阳极氧化前铝表面微观不平将 使阳极氧化膜中产生一种孔隙率高的界面 ,热冲击过程中这种界面上容易萌生裂纹.
参考文献
| [1] | Kirschman R K.Cold electronics: an overview in Low- Temperature Electronics[M].New York: IEEE Press,1985 |
| [2] | Vaezi- Nejad S M .Primary investigation for anodized aluminium as a srbstrate for hybrid microelectronics Part 1 Electrical and mechanical properties[J].International Journal of Electronics,1990,68(01):59-68. |
| [3] | Sakamoto Noriaki;Kanai Tetsuo;Okhawa Katsumi.Thermal design and structure of thick film hybrid IC based on insulated aluminum substrate[A].Publ by IEEE,1993 |
| [4] | Mervi Paulasto;Hubert Wieser;Torsten Hauck.Multichip SMT power package for automotive market[A].0- 7803- 5908- 9/00/ IEEE,2000 |
| [5] | Di Pascoli S.;Casarosa C.;Bagnoli P.E. .Thermal analysis of insulated metal substrates for automotive electronic assemblies[J].Microelectronics journal,1999(11):1129-1135. |
| [6] | Solomon D;Hoffman P;Brathwaite G.Thermal and elec- trical characterization of the metal ball grid array (MBGA)[A].0569- 5503/95/IEEE,1995 |
| [7] | Tostado S;Chow J.Assembly Process and solder joint integrity of the metal ball grid array package[A].0- 7803- 3286- 5/96 IEEE,1996 |
| [8] | Wykes C .The use of ESPI in the measurement of static and dynamic surface displacements[J].Optical Engineering,1982,21:400-406. |
| [9] | Shimizu K;Kobayashi K;Thompson G E et al.Develop- ment of porous anodic films on aluminium[J].Philosophical Magazine A:Physics of Condensed Matter:Structure,Defects and Mechanical Properties,1992,66(04):643-652. |
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