通过应用一种新的模型来进行电学测试和参数提取,可以获取SIMOX(离子束注入隔离氧化层)SOI圆片的上界面和下界面的界面态参数以及埋氧层的质量参数.传统的MOS电容结构测试电学特性应用到SOI圆片是有其局限性的,在本实验中直接利用SOI圆片的SIS(Silicon-Insulator-Silicon)结构,将SOI圆片的无损电学表征方法应用到实际的表征当中去.实验采用自行制备的低剂量超薄SIMOXSOI圆片,得到了比较可靠的实验结果.
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