采用MPCVD法在硅衬底上选择性生长金刚石膜

功能材料与器件学报 , 2001, 7(3): 314-317. doi: 10.3969/j.issn.1007-4252.2001.03.023

采用MPCVD法在硅衬底上选择性生长金刚石膜

史伟民 ^1, , 王林军 ^2, , 张文广 ^3, , 居建华 ^4, , 夏义本 ^5,

1.上海大学材料科学与工程学院,

2.上海大学材料科学与工程学院,

3.上海大学材料科学与工程学院,

4.上海大学材料科学与工程学院,

5.上海大学材料科学与工程学院,

关键词：金刚石膜 , 选择性生长 , MPCVD

Selective area growth of diamond films on patterned Si by MPCVD

采用微波等离子体化学气相沉积（MPCVD）法在附有SiO2掩摸的硅衬底上选择性沉积出了金刚石膜。采用扫描电子显微镜（SEM）和Raman光谱仪对金刚石膜的表面形貌和结构进行了表征,并讨论了衬底温度对金刚石薄膜选择性沉积的影响，得出了较佳的沉积条件。

In this paper the morphology and quality of diamond films selectively deposited by micro－ wave plasma chemical vapor deposition (MPCVD) on SiO2 patterned Si substrates were investigated by scanning electron microscope (SEM) and Raman Spectrum. Results indicates that the diamond nucleation density on the SiO2 mask increases with the substrate temperature,so as to deteriorate the effect of selective deposition of diamond films. This change trend and the optimized deposition tem－ perature were also discussed.

参考文献

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