由于没有合适的衬底材料与之匹配，使外延生长的 GaN材料缺陷密度很大，从而限制了它的 应用。采用 LEO(横向过生长外延 )技术能使缺陷密度降低 3～ 4个数量级，可生长出高质量的 GaN 材料。本文简要介绍了应用 LEO技术生长 GaN材料的现状及对生长机理研究的进展。
Traditional epitaxial growth of GaN by MOCVD on mismatched substrates such as sapphire will produce high density of dislocations. Lateral growth of GaN films have a low density of disloca－ tions. The mechanism of lateral epitaxy GaN was investigated in the work. It shows that the lateral growth rate is dependent strongly on the direction of the mask layer, TMG flow rates and temperature.
参考文献
| [1] | Bhapkar U R;Shur M .[J].Journal of Applied Physics,1997,82:1649. |
| [2] | Wu Y F.55th Annual Device Research Conf. Digest Fort Collins,CO,USA[A].IEEE,1997:142. |
| [3] | Gaska R et al.[J].Applied Physics Letters,1998,72:707. |
| [4] | Burm J.Gallium Nitride and Related Semiconductors[M].:569. |
| [5] | Grzegory I;Porowski S;Edgar J H;Strite S, Akasaki I,.Gallium Nitride and Related Semiconductors[M].Wetzel:359. |
| [6] | Liau Z L et al.[J].Applied Physics Letters,1996,69:1665. |
| [7] | Lester S D;Ponce F A;Craford M G .[J].Applied Physics Letters,1995,66:1249. |
| [8] | Akasaki I. .Progress in crystal growth and future prospects of group III nitrides by metalorganic vapor-phase epitaxy[J].Journal of Crystal Growth,1998(1/4):248-251. |
| [9] | Marchand H.;Fini PT.;Keller S.;DenBaars SP.;Speck JS. Mishra UK.;Ibbetson JP. .Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition[J].Journal of Crystal Growth,1998(1/4):328-332. |
| [10] | Hiramatsu K;Matsushima H;Shibata T .[J].Materials Research Society Symposium Proceedings,1998,482:257. |
| [11] | Zheleva T S;NamOH;Davis R F.Gallium Nitride and Related Semiconductors[M].:447. |
| [12] | Nakamura S;Senoh M;Nagahara S.Proc 2nd Int Conf on Nitride Semicond[C].Tokushima,Japan,1997:444. |
| [13] | Zheleva T;Nam O H;Griffin J .[J].Materials Research Society Symposium Proceedings,1998,482:393. |
| [14] | Hiramatsu K;Usui A;Edgar J H;Strite S,Akasaki I.Gallium Nitride and Related Semiconductors[M].:444. |
| [15] | Kato Y;Kitamura S;Hiramatsu K .[J].Journal of Crystal Growth,1994,144:133. |
| [16] | Kimura A;Sasaoka C;Sakai A .[J].Materials Research Society Symposium Proceedings,1998,482:119. |
| [17] | Kitamura S;Hiramatsu K;Sawaki N .[J].Japanese Journal of Applied Physics,1995,34:L1184. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%