通过比较经过和未经过等离子暴露的两种薄栅氧化硅层在恒电流条件下击穿时间tbd的差异，计算出在等离子体暴露过程中由充电效应导致的隧穿电流在天线比为2000的MOS电容栅氧化硅层中产生的陷阱密度为2.35×1018cm－3，表明充电效应导致损伤的出现。
The trap density generated by tunneling current during plasma exposure is caculated by comparing the difference of time－to－breakdown (tbd) between no－plasma－exposure gate oxide and plasmaexposure gate oxide. The results show that the trap density generated in silicon oxide by plasma charging is 2.35×1018cm－3.
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