通过对最近两次SOI国际会议的分析,综述了SOI技术取得的新进展。三种SOI技术SIMOX,Smart-cut和BESOI已走向商业化,在高温与辐射环境下工作的SOI电路也走向了市场。近来人们更加重视SOI技术,是因为SOI在实现低压、低功耗电路上的突出优越性。
The new progress at the Silicon- On- Insulator (SOI) technology is reviewed, according to the analysis of the recent two SOI international conferences. Three techniques, SIMOX, Smart- cut and BESOI,become very successful and commercially in producing SOI material. SOI devices have been used in several market applications such as high temperature and radiation hard integrated circuits. Recent-ly much attention has been paid to SOI technology, because the most prominent advantage of SOI circuits is its ability to realize low voltage/low power.
参考文献
[1] | Hemment P L F.Silicon- on- Insulator technology and devices IX[A].(99):3. |
[2] | 1999 IEEE International SOI Conference Proceedings Doubletree Hotel Sonoma Country,Rohnert Park[C].California,1999 |
[3] | 林成鲁;张苗 .SOI-二十一世纪的微电子技术[J].功能材料与器件学报,1999,5(01):1-7. |
[4] | Colinge J P.Silicon- on- Insulator technology materials to VLSI[M].England:Kluwer Academic Publisher,1991 |
[5] | Silicon- on- Insulator technology[J].MRS Bulletin,1998,23(12) |
[6] | Adan A O;Naka T .[J].Electrochemical Society Proceedings,1997,23:340. |
[7] | Vasudev PK .[J].Solid-State Electronics,1996,39(04):481. |
[8] | Yoshikawa et al.[J].Hitachi Review,1999,48:349. |
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