欢迎登录材料期刊网

材料期刊网

高级检索

采用金属有机化学气相沉积方法,在不同氧气分压下,对硅衬底氧化锌薄膜材料生长做了研究.X-射线衍射方法对氧化锌薄膜的结晶质量做了比对测试.测试结果表明薄膜是沿着(002)方向生长.利用光荧光谱测试分析,对薄膜的发光特性做了研究,研究发现随着氧气分压增大,薄膜的紫外发光峰增强.通过原子力显微镜测试,对薄膜的表面形貌做了观察,发现结晶颗粒的平均粗糙度、均方根,以及平均直径随着氧气分压的增大呈现逐渐变小的趋势.

参考文献

[1] Aoki T,Hatanaka Y,Look D C.ZnO diode fabricated by exeimer-laser doping[J].Appl.Phys.Lett.,2000,76(22):3257(1-2).
[2] Liu Y,Gorla C R,Liang S,et al.Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD[J].Electron.Materm.,2000,29(1):69-74.
[3] Carcia P F,McLean R S,Reilly M H,et al.Transparent ZnO thin film transistor fabricated by rf magnetro sputtering[J].Appl.Phys.Lett.,2003,82(7):1117(1-3).
[4] Chichibu S F,Yoshida T,Onuma T,et al.Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire(0001)substrates[J].Appl.Phys.,2002,91(2):874-878.
[5] Zhang Y,Du G,Liu D,et al.Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions[J].Crystal Growth.,2002,243(3):439-443.
[6] Tang Z K,Wong G K L,Yu P,et al.Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films[J].Appl.Phys.Lett.,1998,72(25):3270(1-3).
[7] Cao H,Zhao Y G,Ong H C,et al.Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films[J].Appl.Phys.Lett.,1998,73(25):3656(1-3).
[8] Bagnall D M,Chen Y F,Zhu Z,et al.Optically pumped lasing of ZnO at room temperature[J].Appl.Phys.Lett.,1997,70(17):2230(1-3).
[9] Ma Y,Du G T,Yang S R,et al.Control of conductivity type in undoped ZnO thin films grown by metalorganic vapor phase epitaxy[J].Chin.Phys.Lett.,2004,95(11):6268-6272.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%