在有效质量近似和变分原理的基础上,考虑量子点的三维约束效应和内建电场.研究了ZnO/MgxZn1-xO0耦合量子点中激子结合能、带间光跃迁能以及电子-空穴复合率随量子点结构参数(量子点高度和势垒层厚度)的变化.结果表明:激子结合能、带间光跃迁能和电子-空穴复合率随量子点高度或势垒层厚度的增加而降低.
参考文献
| [1] | 危书义,王雁,魏玲玲.纤锌矿GaN/ZnO量子阱中的界面声子[J].液晶与显示,2008,23(2):132-135. |
| [2] | Debasis Bera,Lei Oian,Subir Sabui,et al.Photoluminescence of ZnO quantum dots produced by a sol-gel process[J].Optical Materials,2008,30(8):1233-1239. |
| [3] | Sun L L,Cheng W J,Lin F T,et al.Changes of structure and optical energy gap induced by oxygen pressure during the deposition of ZnO films[J].Phys.B,2006,381(16):109-112. |
| [4] | 王志军,李守春,吕有明.变分方法研究ZnO量子点中激子的基态特性[J].发光学报,2006,27(2):225-228. |
| [5] | Xia C X,Shi J J,Wei S Y.Exciton states in wurtzite lnGaN coupled quantum dot[J].China Phys.Lett.,2004,21(8):1620-1623. |
| [6] | 危书义,杨艳玲,夏从新,等.耦合GaN/AlxGa1-xN量子点的非线性光学性质[J].液晶与显示,2007,22(3):240-244. |
| [7] | Kayanuma Y.Wannier excitons in low-dimension microstructures:Shape dependence of the quantum size effect[J].Phys.Rev.B,1991,44(23):13085-13088. |
| [8] | Vurgaftman I,Meyer J R.Band parameters for Ⅲ-Ⅳ compound semiconductors and theiralloys[J].J.Appl.Phys.,2001,89(11):5815-6875. |
| [9] | Zhang B P,Kang J Y,Yu J Z,et al.Growth and optical properties of ZnO films and quantum wells[J].Chin.J.Semiconductors,2006,27(4):613-622. |
| [10] | Seoung-Hwan Park,Doyeol Ahn.Crystal orientation effects on electronic and optical properties of wurtzite ZnO/MgZnO quantum well lasers[J].Optical and Quantum Electronics,2006,38(12):935-952. |
| [11] | Wei S Y,Wei L L,Xia C X.Exciton states and interband optical transitions in ZnO/MgZnO quantum dots[J].J.Lumin.,2008,128:1285-1290. |
| [12] | Shizuo Fujita,Hiroshi Tanaka,Shigeo Fujita.MBE growth of wideband gap wurtzite MgZnO quasi-alloys with MgO/ZnO superlattices for deep ultraviolet optical functions[J].J.Crystal Growth,2005,278(1):264-267. |
| [13] | Malashevich Andrei,Vanderbilt David.First-principles study of polarization in Zn1-xMgxO[J].Phys.Review B,2007,75(4):45106-45110. |
| [14] | Coli Giuliano,Bajaj K K.Excitonic transitions in ZnO/MgZnO quantum well heterostructures EJ-I.Appl.Phys.Lett.,2001,78(19):2861-2863. |
| [15] | Wei S Y,Wu H R,Xia C X,et al.Exciton in wurtzite GaN/AlxGa1-xN coupled quantum dots[J].J.Lumin.,2006,118(2):139-146. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%