在介电连续模型下,运用传递矩阵的方法研究了任意层纤锌矿量子阱中界面光学声子的电声相互作用,得出了任意层纤锌矿量子阱中界面光学声子与电子相互作用的哈密顿.结果表明,在对称单量子阱GaN/InxGal-xN/GaN中,界面声子-电子相互作用的耦合强度随组分x的变化差别很大;在对称单量子阱GaN/In0.8Ga0.2N/GaN中,不同的界面声子随着波数的变化对电声相互作用的贡献不同.
参考文献
| [1] | Wendler L Electron-phonon interaction in dielectric bilayer systems[J].Status Solidi B,1985,129(2):513-520. |
| [2] | Baroni S,Giannozzi P,Molinari E.Phonon spectra of uhrathin GaAs/AIAs superlattices:An ab initio calculation[J].Phys.Rev.B,1990,41(6):3870(2-6). |
| [3] | Loudon R.The roman effect in crystals[J].Adv.Phys.,1964,13(7):429-434. |
| [4] | Hayers W,Loudon R.Scattering of Light by Crystals[M].New York:Wiley,1964:169. |
| [5] | Lee B C,Kim K W,Strroscio M A,et al.Optical-phonon confinement and scattering in wurtzite heterostructures[J].Phys.Rev.B,1998,58(8):4860(1-2). |
| [6] | Komirenko S M,Kim K W,Stroscio M A,et al.Dispersion of polar optical phonons in wurtzite quantum wells[J].Phys.Rev.B,1999,59(7):5013(1-3). |
| [7] | Shi J J.Interface optical-phonon modes and electron-interfaee-phonon interaction in wurtzite GaN/AIN quantum wells[J].Phys.Rev.B,2003,68(16):165335(1-7). |
| [8] | 危书义,黄文登.GaN/AIN量子阱中的准受限声子[J].液晶与显示,2005,20(4):309-311. |
| [9] | 危书义,张芳,黄文登,等.纤锌矿InxGa1-xN/GaN量子阱中的界面声子模[J].液晶与显示,2006,21(4):336-342. |
| [10] | Wendler L.Electron-phonon interaction in dielectric bilayer systems.Efflect of the electronic polarizability[J].Phys.Status Solidi B,1985,129(2):513-530. |
| [11] | Alexson D,Bergman L,Dutta M,et al.Confined phonons and phone-mode properties of Ⅳ-Ⅴ nitrides with wurtzite crystal structure[J].Phys.B,1999,263-264:510-513. |
| [12] | Haken H.Quantum Field Theory of Solids[M].North-Holland,Amsterdam:Elsevier Science Publishing Company,1976,232. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%