采用等离子增强型化学气相沉积法(RF-PECVD),源气体为NH3/SiH4/N2的混合气体,在330 ℃的温度下沉积a-SiNx:H薄膜.研究表明在反应气体流量一定的情况下,反应腔气压对薄膜沉积速率影响最大.采用Fourier红外吸收光谱技术分析a-SiNx:H薄膜中化学键结构,随着沉积速率的提高,薄膜的化学键结构发生变化,N-H键含量和氮含量增大,Si-H键含量和氢含量降低.薄膜沉积速率是影响薄膜物理和光学性质的重要工艺参数.禁带宽度(E04)主要受薄膜中氮原子含量的调制,随着沉积速率增大,氮原子含量增大.另外,介电常数和折射系数则随之增大.最后得到满足薄膜晶体管性能要求的最佳工艺参数.
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