目前有源平板显示领域主要采用PECVD法制备TFT用硅薄膜,但是由于PECVD中等离子对Si薄膜的损伤以及淀积薄膜的温度很高的缺点,使其在制备高迁移率TFT的应用中受到了限制.新出现的催化化学气相淀积法(Cat-CVD)与PECVD法相比,具有淀积速率高﹑原料气体利用效率高﹑衬底温度低﹑生长的薄膜致密﹑电学特性好等优点,将更有希望成为TFT用硅薄膜制备的新技术.文章对Cat-CVD法的工作机理及其在TFT中的应用进展进行了详细总结,归纳了各种催化丝材料,并对当前Cat-CVD技术研究中的不足及其以后的研究发展进行了讨论.
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