利用水热的方法制备了ITO透明导电薄膜,通过正交试验设计研究镀膜工艺因素对薄膜光电特性的影响规律.试验结果表明:影响薄膜光电性能的主要因素是前驱物浓度,其次是氨水浓度和保温温度,保温时间对薄膜光电性能的影响较小.在采用前驱物浓度为0.5 mol/L、氨水浓度为3 mol/L、保温温度为160 ℃、保温时间8 h的实验条件下,沉积薄膜的性能较好.
参考文献
| [1] | Tahar B H R,Ban T,Ohay Y.Tin doped indium oxide thin films electrical properties[J].Appl.Phys.,1998,83(3):2631. |
| [2] | 来冰,丁训民,袁泽亮.同步辐射光电子能谱对ITO表面的研究[J].半导体学报,1999,20(7):543-547. |
| [3] | 仲飞,刘彭义,段光凤.退火处理对ITO表面特性及有机发光器件性能的影响[J].液晶与显示,2005,20(6):498-502. |
| [4] | 段学臣,杨向萍.新材料ITO薄膜的应用和发展[J].稀有金属与硬质合金,1999,138(9):58-60. |
| [5] | 占红明,饶海波,张化福.基于有机电致发光显示的透明导电膜ITO[J].液晶与显示,2004,19(5):386-390. |
| [6] | John C C Fan.Preparation of Sn doped In2O3 (ITO) films at low deposition temperature by ion beam sputtering[J].Appl.Phys.Lett.,1979,34(8):515. |
| [7] | Karasawa T,Miyata Y.Electrical and optical properties of indium tin oxide thin films deposited on unheated substrates by DC reactive sputtering[J].Thin Solid Films,1993,223(1):135. |
| [8] | Danson N,Safi I,Hall G W,et al.Techniques for the sputtering of optimum indium tin oxide films onto room temperature substrates[J].Surf.Coat.Techn.,1998,99(1-2):147. |
| [9] | Zhang D H,Ma H L.Scattering mechanisms of charge carries in transparent conducting oxide films[J].Appl.Phys.,1996,A62(5):487. |
| [10] | Tadatsugu Minami,Yoshihiro Takeda,Shinzo Takata,et al.Preparation of transparent conducting In4Sn3O12 thin films by DC magnetron sputtering[J].Thin Solid Films,1997,308-309(13):13. |
| [11] | Wu W F.RF magnetron sputtering ITO films and ITO films with antireflective and hard coating[D].Hsinchu:National Chiao Tung University,1994. |
| [12] | 职利,徐华蕊,朱归胜,等.水热法制备ITO薄膜的研究[J].材料导报,2006,20(5):136-138. |
| [13] | 李云雁,胡传荣,编著.试验设计与数据处理[M].北京:化学工业出版社,2004:62-64. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%