采用射频磁控溅射法在载波片玻璃衬底上制备了锑掺杂二氧化锡(SnO2:Sb)透明导电薄膜.利用霍耳效应实验、紫外可见光光谱仪、n(折射率)k(消光系数)d(薄膜厚度)光谱仪对该导电薄膜的光电性能进行了测试.讨论了氧气分压对样品光电性能的影响,增加氧气分压,薄膜的厚度减小、吸收边和截止波长蓝移,光学带隙增大,并且氧气分压对薄膜电阻率、载流子浓度和霍耳迁移率的影响不是线性的,而是存在一个最佳值.当氧气分压为0.10 Pa时,薄膜的光电性能最佳,此时膜厚为399 nm,可见光平均透过率为70 %,电阻率为2.5×10-3 Ω·cm,载流子浓度为1.2×1021 cm-3,载流子霍耳迁移率为2.04 cm2·V-1·s-1,其光电特性已达到了TFT-LCD透明电极的要求.
参考文献
| [1] | Jarzebski Z M, Martom J P. Physical properties of SnO2 materials II. Electrical properties[J]. J. Electrochem. Soc., 1976, 123(9):299-310. |
| [2] | Santos-Pe(n)a J, Brousse T, Sánchez L, et al. Antimony doping effect on the electrochemical behavior of SnO2 thin film electrodes[J]. J. Power Source, 2001, 97-98:232-234. |
| [3] | Park S S, Zheng H, Mackenzie J D. Ethanol gas sensing properties of SnO2-based thin film sensors prepared by the sol-gel process[J]. Mater. Lett., 1993, 17:346-352. |
| [4] | Ma(c)ek M, Orel B. Electrochromism of sol-gel derived niobium oxide films[J]. Solar Energy Mate. & Solar Cells,1998, 54:121-130. |
| [5] | Vaufrey D, Khalifa M B, Besland M P, et al. Reactive ion etching of sol-gel-processed SnO2 transparent conducting oxide as a new material for organic light emitting diodes[J]. Synthetic Metals., 2002,127:207-211. |
| [6] | T(a)tte T, Avarmaa T , L(o)hmus R, et al. Transparent and conductive Sb-doped tin oxide SPM tips prepared by sol-gel method[J]. Mate. Scien. And Eng. C, 2002,19: 101-104 . |
| [7] | Ma H L, Zhang D H, Chen Y P, et al. Large scale fluorine doped textured transparent conducting SnO2 films deposited by atmospheric pressure chemical vapour deposition[J].Thin Solid Films, 1997, 298(1-2):151-155. |
| [8] | Shanthi S, Subramanian C, Ramasamy P. Growth and characterization of antimony doped tin oxide thin films[J]. J. Crys. Growth, 1999, 197(4):858-864. |
| [9] | Hao X T, Ma J, Zhang D H, et al. Electrical and optical properties of SnO2:Sb films prepared on polyimide substrate by r.f. bias sputtering[J]. Appl. Surf. Scien., 2002, 189:157-161. |
| [10] | Huang J L, Pan Y, Chang J Y, et al. Annealing effects on properties of antimony tin oxide thin films deposited by RF reactive magnetron sputtering[J]. Surface and Coatings Tech., 2004, 184:188-193. |
| [11] | Terrier C, Chatelon J P, Berjoan R, et al. Sb-doped SnO2 transparent conducting oxide from the sol-gel dip-coating technique[J]. Thin Solid Films, 1995, 263(11):37-41. |
| [12] | Folcher G, Cachet H, Froment M,et al. Anodic corrosion of indium tin oxide films induced by the electrochemical oxidation of chlorides[J]. Thin Solid Films, 1997,301(1-2):242-248. |
| [13] | 李燕, 陈希明, 熊英, 等. 溅射法生长高度取向ZnO的实验研究[J]. 液晶与显示, 2004, 19(3):174-178. |
| [14] | 杨建广,唐谟堂, 唐朝波,等. 锑掺杂二氧化锡薄膜的导电机理及理论电导率[J].纳米材料与结构, 2004,(4):18-21. |
| [15] | Hong R J, Jiang X, Szyszka B,et al. Studies in ZnO:Al thin films depositedby in-line reactive mid-frequency magnetron sputtering[J]. Appl. Surf. Scien., 2003, 207:341-350. |
| [16] | 赵青南, 李春领, 赵修建. 氧分压及热处理温度对玻璃基二氧化钛薄膜的表面形貌及光学性能的影响[J].稀有金属材料与工程, 2004,33(3):309-312 |
| [17] | Ishiguro K, Sasaki J, Arai T. Optical and electrical properties of tin oxide films[J]. J. Phys. Soc. of Japan, 1958, 13(3):296-304. |
| [18] | Hamberg I, Granqvist C G. Evaporated Sn-doped In2O3 films:Basic optical properties and applications to energy-efficient windows[J]. J. Appl. Phys., 1986,60(11):R123-R159. |
| [19] | Laux S, Kaiser N, Zoller A,et al. Room-temperature deposition of indium tin oxide thin films with plasma ion-assisted evaporation[J]. Thin Solid Films, 1998, 335(1-2):1-5. |
| [20] | Gratzel M. Heterogeneous Photochmical Electron Transfer.Boca Raton [M]. Florida:CRC Press,1989. |
| [21] | Terrier C, Chatelon J P, Roger J A. Electrical and optical properties of Sb:SnO2 thin films obtained by the sol-gel method[J]. Thin Solid Films, 1997, 295(1-2):95-100. |
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