在有效质量近似下,运用变分方法,考虑到量子点内电子和空穴的三维束缚以及由压电极化和自发极化所引起的内建电场,对圆柱型耦合GaN量子点的光学性质及激子态做了研究.给出了激子结合能Eb、量子点发光波长λ、电子-空穴复合率和量子点高度LGaN以及势垒层厚度LAlGaN之间的函数关系.结果表明,量子点高度LGaN、势垒层厚度LAlGaN的增加将导致激子结合能、电子-空穴复合率的降低,耦合量子点发光波长的增加.
参考文献
| [1] | Tanaka S, Iwai S, Aoyagi Y. Self-assembling GaN quantum dot on AlxGa1-xN surfaces using a surfactant[J]. Appl. Phys. Lett., 1996, 69(69): 4096-4098. |
| [2] | 潘建根. LED光色电综合性能分析测试原理与仪器[J].液晶与显示, 2003,18(2):138-140. |
| [3] | Yang H C, Lin T Y, Chen Y F. Persistent photoconductivity in InGaN/GaN multiquantum wells[J]. Appl. Phys. Lett., 2001, 78(3): 338-340. |
| [4] | Xia C X, Shi J J, Wei S Y. Exciton states in wurtzite InGaN coupled quantum dot[J]. China Phys. Lett., 2004, 21(8):1620-1623. |
| [5] | Fiorentini V, Bernardini F, Sala F D. Effects of macroscopic polarization in Ⅲ-Ⅴ nitride multiple quantum wells[J]. Phys. Rev. B, 1999, 60(12): 8849-8858. |
| [6] | Grandjean N, Damilano B, Dalmasso S. Built-in electric-field effect in wurtzite AlGaN/GaN quantum wells[J]. J. Appl. Phys., 1999, 86(7): 3714-3719. |
| [7] | Goff S L, Stebe B. Influence of longitudinal and lateral confinements on excitons in cylindrical quantum dots of semiconductors[J]. Phys. Rev. B, 1993, 47(3): 1383-1391. |
| [8] | Kayanuma Y. Wannier excitons in low-dimension microstructures: Shape dependence of the quantum size effect[J]. Phys. Rev. B, 1991, 44(23): 13085-13088. |
| [9] | Vurgaftman I, Meyer J. R. Band parameters for Ⅲ-Ⅴ compound semiconductors and theiralloys[J]. J. Appl. Phys., 2001, 89(11): 5815-5875. |
| [10] | Martin G, Botchkarev A, Rockett A. Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy[J]. Appl. Phys. Lett.,1996, 68(18): 2541-2543. |
| [11] | Takeuchi T, Wetzel C, Yamaguchi S. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect[J]. Appl. Phys. Lett., 1998, 73(12):1691-1693. |
| [12] | Yamaguchi M, Yagi T, Azuhata T. Brillouin scattering study of gallium nitride: elasticstiffness constants[J]. J. Phys.: Condens. Matter., 1997, 9(1): 241-248. |
| [13] | Chin V W L, Tansley T L, Osotchan T. Evidence of bistable shallow-deep silicon donors in GaAs-AlAs superlattices[J]. J. Appl. Phys., 1994, 75(11): 7356-7360. |
| [14] | Barker A S, Ilegems M. Infraed lattice vibrations and free-electron dispersion in GaN[J]. Phys. Rev. B, 1973, 7(2): 743-750. |
| [15] | Ernardini F B, Fiorentini V, Vanderbilt D. Spontaneous polarization and piezoelectric constant of III-Ⅴ nitrides[J]. Phys. Rev. B, 1997, 56(16): R10024-10027. |
| [16] | Mathieu Leroux, Nicolas Grandjean, Jean Massies. Barrier-width dependence of group-Ⅲ nitrides quantum-well transition energies[J]. Phys. Rev. B, 1999, 60(3): 1496-1499. |
| [17] | Cingolani R, Bptchkarev A, Tang H. Spontaneous polarization and piezoelectric field in GaN/Al0.15Ga0.85N quantum wells: Impact on the optical spectra[J]. Phys. Rev. B, 2000, 61(4): 2711-2715. |
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