讨论了掺氮磷化镓（GaP∶N）荧光光谱的峰值强度（孤立氮等电子中心束缚激子发光峰A、最邻近N-N对束缚激子发光峰NN1和次邻近N-N对束缚激子发光峰NN3）随激发强度的变化规律，并在发光跃迁动力学方程中计入了由于高激发密度引起的样品温度升高，而导致孤立氮A的能级NA和最邻近N-N对NN1的能级的热激发的增强，得到了R（即最近邻N-N对(NN1)束缚激子发光峰与孤立N等电子中心束缚激子发光峰的强度比INN1/IA）与掺N浓度和激发光强的变化关系。利用实验数据进行拟合，得到了更好的拟合结果，并讨论了用此法计算GaP∶N样品中氮浓度时应注意的一些问题。
The relationship between the three sharp lines A, NN1 and NN3 inthe luminescence spectra of GaP and the laser excitation intensity Iex is shown experimentally. Moreover, when the thermal emission of NA and NN1 levels due to the high excitation power is included in the luminescence dynamics equations, the relation between ratio of INN1/IA, Iex and the nitrogen concentration [N] of GaP is obtained. Then it is used for fitting the experimental data and the result is better. In the last, some advice is given about determining nitrogen concentration by this way.
参考文献
| [1] | Thierry-Mieg V, Marbeuf A, Chevallier J, et al. Determination of the nitrogen doping of liquid phase epitaxy GaP and GaxIn1-xP alloys by optical absorption and photoluminescence [J]. J.Appl.Phys., 1983, 54(9)： 5358-5362. |
| [2] | Dou Kai,Zhang Xinyi， Hong Qiang. Radiative and nonradiative recombination of bound excitons in GaP∶N [J]. Phys.Rev., 1990, B41(3):1382-1385. |
| [3] | 康秀英， 杨锡震， 李成基. GaP∶N发光谱中I1/IA与N浓度的关系 [J]. 发光学报， 1999， 20(增刊)： 43-45. |
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