利用DSC方法研究了纯铝薄膜中的小丘现象,同时制备了Al双层栅电极Ta/Al、 Cr/Al和Mo/Al薄膜,并在不同温度下进行了退火处理,研究了双层结构中上层金属(Ta、 Cr和Mo)厚度对Al薄膜中小丘的抑制作用.实验结果表明,上层Ta膜厚度在80~90nm左右(在本实验条件下)时,可得到表面无小丘的Ta/Al薄膜栅材料.实验制备的表面无小丘Ta/Al、 Cr/Al和Mo/Al等栅电极材料的电阻率均在7~20μΩ.cm之间,基本满足现今对角线为25~51cm(10~20in)大屏幕、高清晰度TFT LCD要求.
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