采用CVD法制备了SiC涂层包覆短碳纤维,并通过凝胶注模成型工艺制备了(SiC) Cf/Si3N4复合陶瓷,探讨了烧结温度对复合陶瓷中(SiC) Cf形貌的影响.同时研究了(SiC) Cf的含量对复合陶瓷力学以及介电性能的影响,当(SiC) Cf含量达到10wt％时,样品的抗弯强度比纯Si3N4陶瓷降低了112 MPa,但断裂韧性显著提高,增加了11.5 MPa·m1/2,介电常数实部和虚部达到最大,介电实部约为15～18,虚部约为6～8;反射衰减随(SiC)Cf的含量和厚度的增加而向低频移动.
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