介绍了在电弧加热器上进行的SiC的抗氧化机制研究试验,根据SiC的主动、被动氧化机制,调试出相应试验条件并进行了模型试验.结果表明,SiC在一定的氧分压环境中,表面温度低于转捩温度时,会在表面形成SiO2薄膜,阻止氧向防热层内部扩散,降低了碳同氧的反应程度,阻止了基体碳的烧蚀;当表面温度高于转捩温度时材料发生主动氧化,材料表面发生烧蚀.
参考文献
| [1] | Fertig M;Fruhauf H H;Auweter-Kurtz M .Modlling of reactive processes at SiC surfaces in rarefied nonequilibrium.Airflows[AIAA 2002-3102][R]. |
| [2] | Hald H;Ullmann T .Reentry flight and ground testing experience with hot structures of C/C-SiC material[AlAA 2003-1667][R]. |
| [3] | Marianne J. H. Balat .Determination of the Active-to-Passive Transition in the Oxidation of Silicon Carbide in Standard and Microwave-Excited Air[J].Journal of the European Ceramic Society,1996(1):55-62. |
| [4] | Frank S M;Jochen Marschall .Thermochemical abiation model for TPS materials with multiple surface constituents[AIAA,94-2042][R]. |
| [5] | 陈思员,姜贵庆,俞继军,欧东斌.碳化硅材料被动氧化机理及转捩温度分析[J].宇航材料工艺,2009(03):21-24. |
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