概述了CVD-Si3N4陶瓷及其复合材料在干燥氧气下的氧化行为.Si3N4陶瓷在高温下氧化时,除生成SiO2保护膜外,还生成一薄层比SiO2膜更优异的氧气扩散阻挡层(Si-O-N化合物层),该层具有优异的抗氧化性能.介绍了两种氧化机制模型,同时分析了温度、杂质等对CVD-Si3N4陶瓷氧化行为的影响.
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