通过傅立叶分析模型研究了CoFeSiB非晶丝的GMI效应,将得出的阻抗计算结果与实验比较,发现该模型较符合实验规律.同时计算了非晶丝半径、饱和磁化强度以及电阻率对GMI效应的影响,结果表明增大非晶丝半径,增大饱和磁化强度以及降低电阻率都能使非晶丝的巨磁阻抗效应增大.
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