采用磁控溅射方法,通过不同工艺的退火处理,制备了光电性能优良的TiO2基紫外探测器.通过紫外光电性能测试、扫描电子显微镜( SEM)观察及X射线衍射(XRD)分析,研究了退火工艺对探测器光电性能的影响规律.结果表明:随着退火温度的增加,TiO2晶粒尺寸显著增大,晶界和缺陷数量的变化是导致TiO2基紫外探测器的光电性能随退火工艺变化的根本原因.经500℃/2h退火后,紫外探测器的光电流高出暗电流近2.5个数量级,紫外波段的光响应高出可见光波段近2个数量级,所制备紫外探测器达到了高辐射灵敏度和可见盲特性的要求.
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