以Ti/Si/C为原料,采用反应烧结方法制备Ti3SiC2材料,并分析反应烧结机理.结果表明,以3Ti/1.2Si/2C为起始原料,烧结温度在1 250～1 300℃之间,可以得到Ti3SiC2含量90%以上的Ti3SiC2材料.Ti3SiC2的反应合成机理是固-液反应,即:Ti5Si3和β-Ti形成液相,液相再与TiC反应,进而合成Ti3SiC2.
参考文献
| [1] | Jeitschko W;Nowotny H .Die kristallstructur yon Ti3SiC2-ein neuer komplxcarbid-Typ[J].Monatshefte Fur Chemie,1967,98:329-337. |
| [2] | Goto T;Hirai T .Chemically vapor deposited Ti3SiC2[J].Materials Research Bulletin,1987,22:1195-1201. |
| [3] | Sun Zhimei;Zhang Yi;Zhou Yanchun .Synthesis of Ti3SiC2 powers by solid-liquid reaction process[J].Scaipta Materalia,1999,41(01):61-66. |
| [4] | Barsoum MW.;Elraghy T. .SYNTHESIS AND CHARACTERIZATION OF A REMARKABLE CERAMIC - TI3SIC2[J].Journal of the American Ceramic Society,1996(7):1953-1956. |
| [5] | 梅炳初,刘俊,朱教群,徐学文.热压TiC/Ti/Si/Al合成Ti3SiC2材料的研究[J].稀有金属材料与工程,2005(02):252-255. |
| [6] | Z. F. Zhang;Z. M. Sun;H. Hashimoto .Effects of sintering temperature and Si content on the purity of Ti_3SiC_2 synthesized from Ti/Si/TiC powders[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2003(1/2):283-289. |
| [7] | Y. Zhang;Y. C. Zhou;Y. Y. Li .Solid-liquid synthesis of Ti_3SiC_2 particulate by fluctuation procedure[J].Scripta materialia,2003(3):249-253. |
| [8] | Tang K.;Wang CA.;Huang Y.;Zan QF.;Xu XL. .A study on the reaction mechanism and growth of Ti3SiC2 synthesized by hot-pressing[J].Materials Science & Engineering, A. Structural Materials: Properties, Misrostructure and Processing,2002(1/2):206-212. |
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