以乙酰丙酮铱为前驱体,采用金属有机化合物化学气相沉积(MOCVD)技术在石英片上沉积了Ir/C簇膜.研究了氧气流量及沉积温度对Ir/C簇膜成分和结构的影响.研究发现,少量氧气的加入(4mL/min)大幅度地降低了Ir/C簇膜中碳元素的含量;沉积温度对薄膜中碳含量的影响规律则比较复杂:未通氧气的情况下,在实验温度范围内碳含量随着温度的升高而增大,而在通入氧气的情况下碳含量呈现出先升后降的复杂变化趋势.大量碳的沉积宽化了Ir的衍射峰,使其具有非晶衍射的特征.当沉积温度为650℃,未通氧气沉积的Ir/C簇膜中铱晶粒粒经约为3nm.
参考文献
| [1] | Goto T;Ono T;Hirai T .Preparation of iridium films by MOCVD and their application for oxygen gas sensors[J].Inorganic Materials,1997,33(10):1021-1206. |
| [2] | Vargas R;Goto T;Zhang W et al.Epitaxial growth of iridium and platinum films on sapphire by metalorganic chemical vapor deposition[J].Applied Physics Letters,1994,65(09):1094-1096. |
| [3] | Kwak B S;First P N;Erbil A .Study of epitaxial platinum thin films grown by metalorganic chemical yap deposition[Jl[J].Journal of Applied Physiology,1992,72(08):3735. |
| [4] | 胡昌义,李靖华,王云,万吉高,钱旭,高逸群,邓德国,尹志民.Ir薄膜的化学气相沉积制备及SEM研究[J].有色金属,2002(z1):33-36. |
| [5] | 胡昌义,尹志民,王云,万吉高,邓德国,高逸群.铂薄膜化学气相沉积动力学规律探讨[J].贵金属,2003(01):21-25. |
| [6] | Harding J T;Tuffias R H;Kaplan R B.Oxidation resistant coatings for refractory metals[A].Chemical Propulsion Information Agency,Laurel MD,CPIA Publication,1985:181-188. |
| [7] | Goto T;Vargas R;Hirai T .Preparation of iridium clusters by MOCVD and their electrochemical properties[J].Materials Science and Engineering,1996,A217,218:223-226. |
| [8] | Goto T;Vargas R;Hirai T .Preparation of iridium and platinum films by MOCVD and their properties[J].Journal De Physique,1993,3:297-304. |
| [9] | Goto T;Ono T;Hirai T .Preparation of iridium films by MOCVD and their application for oxygen gas sensors[J].Inorganic Materials,1997,33(10):1017-1021. |
| [10] | Hu C;Wan J;Dai J .Iridium/carbon films prepared by MOCVD[J].Platinum Metals Review,2005,49(02):70-76. |
| [11] | 理学电机株式会社.x射线衍射手册[M].理学电机株式会社,1987:17. |
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