用电化学方法、实验室全浸实验和X射线应力分析技术研究了退火温度对碳化硅颗粒增强2024铝(SiCp/2024Al)基复合材料腐蚀行为的影响,并用扫描电子显微镜(SEM)观察了腐蚀前后的微观形貌.结果表明;高温退火条件下材料的腐蚀电位Ecom和孔蚀电位Epit均有较大程度的负移,但退火温度的不同对SiCp/2024Al基复合材料抗局部腐蚀能力影响不大;退火温度升高,由于富铜相析出增加及热失配造成的微缝隙增多而使材料的腐蚀坑变多、变浅、均匀化程度加深.
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