研究了腐蚀法制备的碳化硅量子点荧光特性及其致病镰刀菌活体细胞标记强度与机制.结果表明当激发光为340nm时SiC量子点光致发光强度最大,随着激发光波长增加,发射光波长出现红移现象,且具有较高的斯托克斯(Stokes)位移,由于荧光发射可以全色调谐,从而实现了致病镰刀菌的近紫外检测,可用来对自发荧光细胞的有效检测与定量分析.进一步对致病镰刀菌活体细胞SiC量子点荧光标记机制的研究结果表明,量子点通过网格蛋白依赖的内吞方式进入活体细胞内部,并均匀分布,从而实现了对致病镰刀菌的稳定荧光标记.另外基于实验结果与理论分析,提出了致病镰刀菌SiC量子点荧光标记模型.
Fluorescence characteristics of silicon carbide quantum dots(SiC-QDs) prepared by chemical corrosion method and labeling mechanism for the living cells of pathogenic fusarium were explored.The results indicate that SiC-QDs photoluminescence intensity reach the maximum value when excitation wavelength is 340nm.Red shift phenomenon of emission wavelength will occur with the excitation wavelength increasing.Because of larger Stokes shift and tunable color fluorescent, near ultraviolet detection for living cells with SiC-QDs fluorescent marking was achieved, which can effectively detect and quantitatively analyze the autofluorescence cells.The results of labeling mechanism for living cells of pathogenic fusarium with SiC-QDs exhibit that quantum dots can reach the cells interior through the clathrin endocytosis action, and achieve homogeneous distribution.So the living cells were marked with stably fluorescent labeling.Moreover, marking model for living cells with SiC-QDs was established based on the experimental results and theoretical analysis.
参考文献
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%