采用真空烧结方法制备了Nb2O5∶TiO2(NTO)的陶瓷靶材,研究了在7.5%(质量分数)掺杂量下不同烧结温度对NTO陶瓷靶材的微观结构、表面形貌、电学性能、致密度和抗弯强度的影响.通过对NTO靶材的各项性能进行了表征分析表征,实验结果表明,当烧结温度在1 150 ℃,掺杂量在7.5%(质量分数)时,所制备的陶瓷靶材各项性能最优,其各项性能指标均表现良好,其电阻率为3.420 mΩ·cm,抗弯强度为129.24 MPa,其致密度为94.30%.表明此时所制备的NTO陶瓷靶材更加适合于实际工业应用.
Nb-doped TiO2 (NTO) ceramic targets were prepared by vacuum sintering process.The effects of sintering temperatures on the crystal structure, fracture surface morphology, mechanical and electrical properties, densification behavior and bending strength of the sintered NTO ceramic targets with doping amount of 7.5wt% Nb2O5 were investigated.The optimum sintering temperature was considered as 1 150 ℃.The results indicated that NTO targets with doping amount of 7.5wt% Nb2O5 sintered at 1 150 ℃ had the best properties combination, which was corresponding to an resistivity of 3.420 mΩ·cm, a bending strength of 129.24 MPa, a relative density of 94.30%.This kind of NTO ceramic has a potential to be used as a high-quality sputtering target.
参考文献
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%