10 kV以上高压功率器件的应用提出了高质量快速4H-SiC 外延生长工艺要求.4°4H-SiC 厚膜外延生长时,对于器件制备不利的三角缺陷和台阶聚并是常见问题,使用 HCl气体作为含Cl化合物,研究了不同刻蚀工艺、不同刻蚀温度对于4H-SiC外延层质量的影响.采用1620℃ HCl气体刻蚀衬底5 min,1600℃外延生长的工艺,可以有效降低三角缺陷数量,同时避免台阶聚并的形成.通过刻蚀工艺,以平均55．2μm/h 的外延速率生长了平均55．2μm厚的高质量4H-SiC外延层,三角缺陷数量＜1个/cm2,表面粗糙度0．167 nm.
According to the requirement of 10KV high voltage power device,high quality and fast-epitaxial growth rate is required for thick SiC epitaxial growth.4 H-SiC epi-layers grown on 4°off-axis substrates at high rates usually suffer from step-bunching and extended triangular defects,both detrimental for device perform-ance.In this paper,by using HCl gas as chloride precursors,the effects of different etching process and etching temperature on SiC epitaxial layer quality were studied.When the substrates were etched by HCl gas at 1 620 ℃for 5 min and then epitaxial grown at 1 600 ℃,step-bunch free epitaxial layer with a minimum triangular defect density and excellent morphology could be grown.By this etching procedure,a 5 5 .2μm SiC layer was grown at the average rate of 5 5 .2μm/h.The number of triangular defects was less than 1/cm2 .The surface roughness is only 0.167 nm.
参考文献
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