采用直流磁控溅射法在不同溅射功率和工作气压条件下沉积 Cu 薄膜,对其进行 X射线衍射、原子力显微镜、电阻率测试,分析了工艺参数对 Cu 薄膜的沉积速率、微观结构和电阻率的影响。通过紫外光刻技术将Cu薄膜制成桥箔,采用电爆测试平台获得Cu桥箔的电爆参数,研究了Cu薄膜的晶粒尺寸、择优取向对其电爆性能的影响。结果表明：随溅射功率的增大,Cu薄膜的沉积速率增加、晶粒尺寸增大、Cu(111)晶面择优取向特性变差,且电阻率降低；随溅射工作气压增大,Cu薄膜的沉积速率降低、晶粒尺寸减小、Cu(111)晶面择优取向越明显,且电阻率增加。对于相同桥区参数的 Cu 桥箔,晶粒尺寸越小,其爆发时刻就越早；Cu (111)晶面择优取向越明显,其爆发电流和峰值功率就会越大。
Copper (Cu)thin films were deposited by DC magnetron sputtering method.The structure,morphol-ogy and resistivity of the deposited Cu films have been examined with respect to the sputtering power and sput-tering pressure.The exploding bridge foils were fabricated with photolithography,and their electro-explosive performances were studied by the test circuit.Both increasing sputtering power and decreasing sputtering pres-sure result in quicker deposition rate,larger grain size and lower resistivity of the deposited Cu films.Besides, the samples have higher crystalline orientation along the (1 1 1 )direction with decreasing sputtering power and increasing sputtering pressure.Moreover,the Cu bridge foils with larger grain size have an earlier burst mo-ment.Meanwhile,the bridge foils have higher peak current and peak power with higher Cu (111)preferred ori-entation.
参考文献
| [1] | 黄娜;唐洪佩;黄寅生;何义.冲击片雷管爆炸箔的制备与电爆性能[J].含能材料,2014(4):514-520. |
| [2] | 褚恩义;任西;钱勇;同红海.爆炸箔冲击片起爆设计参数研究[J].火工品,2008(3):26-27,47. |
| [3] | 付秋菠;蒋小华;郭菲;王丽玲;王亮.爆炸箔尺寸对飞片速度的影响[J].兵工学报,2010(4):434-436. |
| [4] | 张方;钱勇;褚恩义;王可暄;侯丽霞.金属薄膜晶体学结构对其电爆炸性能的影响[J].火工品,2011(2):41-43. |
| [5] | 郭菲;付秋菠;王窈;王猛;黄辉;沈瑞琪.不同制造工艺铜箔电爆驱动飞片能力[J].含能材料,2015(8):787-790. |
| [6] | 花银群;朱爱春;陈瑞芳;郭立强.直流磁控溅射铝纳米颗粒膜的微结构及电学特性[J].功能材料,2015(4):4071-4075. |
| [7] | V. Venugopal;B.J. Thijsse.Study of defects and thermal stability of ultrathin Cu films on Ta(110) and Ta(100) by thermal helium desorption spectrometry[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,200918(18):5482-5488. |
| [8] | 张迪;程伟明;林更其;杨晓非.磁控溅射制备Cu底层的实验研究[J].材料导报,2007(4):138-139,143. |
| [9] | Changsup Ryu;Kee-Won Kwon;Alvin L. S. Loke;Haebum Lee;Takeshi Nogami;Valery M. DubinRahim A. Ka.Microstructure and reliability of copper interconnects[J].IEEE Transactions on Electron Devices,19996(6):1113-1120. |
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