采用自蔓延-热处理工艺制备Co掺杂热电材料β-FeSi2,利用X射线衍射仪和扫描电子显微镜分析Co含量对自蔓延高温合成产物及其热处理后的相组成及微观组织的影响,并测试了产物的电阻率.结果表明,掺杂Co对自蔓延高温合成球状共晶产物的相组成没有影响;对合成产物进一步热处理后,随着Co掺量的增加,样品中β-FeSi2的衍射峰强度逐渐增强,但当Co添加量为0.08%时,有CoSi2生成;对比掺杂与未掺杂Co试样的电阻率,发现前者电阻率有显著的降低,随着Co掺量的增加,在相同温度下,样品的电阻率先降低后升高,且Co添加量为0.05%时,样品纯度最高,电阻率最低.
Thermoelectric material β-FeSi2 was prepared by the method of self-propagating high-temperature synthesis (SHS)and heat treatment.The phase composition and microstructure of Fe-Si intermetallics prepared by SHS and heat treatment were characterised using X-ray diffraction (XRD)and scanning electron microscopy (SEM)respectively.Besides that,and the product resistivity were tested.The results show that the Co content had no effect on the phase composition of spherical products by SHS.But further heat treatment for the prod-ucts,the diffraction peak of β-FeSi2 intensity increased gradually with the increase of Co content.As the atomic fraction of Co was 0.08%,the CoSi2 was detected.Compared with the samples doping and without doping,we can find that the the resistivity of the samples doping was significantly reduced after doping.At the same tem-perature,with the increase of Co content,the samples resistivity firstly decreased and then increased.And for Co doping content to 0.05%,the products had higher purity and lowest resistivity.
参考文献
| [1] | 陈鑫;黄海波;李凡.热电材料a-FeSi2机械合金化和热处理相变[J].东南大学学报（自然科学版）,2008(5):898-901. |
| [2] | Wan-Jun Yan;Shi-Yun Zhou;Fang Gui;Chun-Hong Zhang;Xiao-Tian Guo;Yong Yang.First principles investigation of geometrical and electronic structure of semiconductor Fe_(1-x)Co_xSi_2[J].Materials Science Forum,2011Pt.1(Pt.1):592-595. |
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