采用自主研制的新型碱性蓝宝石抛光液,在蓝宝石化学机械平坦化过程中加入FA/O型非离子表面活性剂,该活性剂能够减小蓝宝石表面粗糙度,同时,在蓝宝石抛光速率下降不明显的情况下实现较高的凹凸去除速率差,有利于实现蓝宝石的全局平坦化.通过实验得到了碱性条件下抛光速率较高、粗糙度较小的最佳pH值.研究了等质量分数等粒径条件下磨料分散度以及抛光温度对抛光速率和蓝宝石表面粗糙度的影响.
参考文献
[1] | Aida, H.;Doi, T.;Takeda, H.;Katakura, H.;Kim, S.-W.;Koyama, K.;Yamazaki, T.;Uneda, M..Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials[J].Current applied physics: the official journal of the Korean Physical Society,2012Suppl.2(Suppl.2):S41-S46. |
[2] | Hideo Aida;Hidetoshi Takeda;Natsuko Aota;Seong-Woo Kim;Koji Koyama.Surface Treatment for GaN Substrate - Comparison of Chemical Mechanical Polishing and Inductively Coupled Plasma Dry Etching[J].Sensors and materials: An International Journal on Sensor Technology,20133(3):189-204. |
[3] | Cheng-Yu Hsieh;Bo-Wen Lin;Wen-Hao Cheng.Semipolar GaN Films on Prism Stripe Patterned a-Plane Sapphire Substrates[J].ECS Journal of Solid State Science and Technology,20121(1):R54-R56. |
[4] | K. K. Leung;W. K. Fong;P. K. L. Chan;C. Surya.Physical mechanisms for hot-electron degradation in GaN light-emitting diodes[J].Journal of Applied Physics,20107(7):073103-1-073103-6. |
[5] | 汪海波;俞沁聪;刘卫丽;宋志棠;张楷亮.工艺条件对蓝宝石化学机械抛光的影响[J].功能材料与器件学报,2010(3):206-210. |
[6] | 张泽芳;侯蕾;闫未霞;刘卫丽;宋志棠.纳米SiO2抛光液的制备及在蓝宝石抛光中的应用[J].润滑与密封,2013(7):88-91. |
[7] | 马振国;刘玉岭;武亚红;王立发;陈景.蓝宝石衬底nm级CMP技术研究[J].微纳电子技术,2008(1):51-54. |
[8] | LIU Yu-ling,TAN Bai-mei,NIU Xin-huan,ZHAO Hai-tao.Control technique of sapphire roughness in CMP processing[C].二〇〇八全国功能材料科技与产业高层论坛论文集,2008:209-212. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%