通过溶胶-凝胶法制备了一种稀土 Ce 掺杂的ZnO-Bi2 O3压敏薄膜,对薄膜进行了XRD、AFM、介电与压敏性能的表征.结果表明,Ce 掺杂不会影响ZnO-Bi2 O3压敏薄膜的晶体结构,但是会减小 ZnO-Bi2 O3压敏薄膜的晶粒尺寸.Ce 掺杂会降低 ZnO-Bi2 O3压敏薄膜的漏电流,减小材料的介电损耗,提升ZnO-Bi2 O3压敏薄膜的非线性性能.当 Ce 掺杂量达到0．3％(摩尔分数)时,ZnO-Bi2 O3压敏薄膜的压敏电压达到了175 V/mm,漏电流降低至502μA.
A kind of rare earth metal cerium doped ZnO-Bi2 O3 varistor thin films were prepared by the sol-gel method.The XRD,AFM,dielectric properties and varistor characteristics were investigated.According the re-sults,the crystal structure of ZnO-Bi2 O3 varistor thin films couldn’t be influenced by Ce doping,while the grain size were decresed.The leakage current and dielectric loss could be decreased by Ce doping,and the non-linear characteristics could be improved.The threshold voltage of ZnO-Bi2 O3 varistor thin film was increased to 175 V/mm and the leakage current was declined to 502μA through 0.3mol% Ce doping.
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