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利用溶胶-凝胶法制备了 Cu 掺杂 ZnO 纳米晶体薄膜,通过 XRD、TEM 、AFM、UV-VLS 和 VSM对其晶体结构、表面形貌、透光性、禁带宽度和磁性进行了表征和分析。结果表明,所有样品都具有 c 轴择优生长取向,Cu 掺杂没有改变 ZnO 晶体的纤锌矿结构,即没有检测到任何非晶态产物以及各种第二相的存在,表明 Cu2+已经取代 Zn2+融入了晶体。但是,Cu的掺杂浓度以及煅烧温度的变化,改善了薄膜的粗糙度、晶粒度、透光率、禁带宽度及室温铁磁性。在所有样品中,掺杂浓度为2%、煅烧温度为500℃的薄膜粗糙度、晶粒度最小而透光性和室温铁磁性最强。样品的能隙则是随着 Cu 掺杂浓度和煅烧温度的提高而变小。

Cu-doping ZnO nano-films were prepared by a sol-gel technique.The crystal structures,surface mor-phology,transmittance,band gap and room magnetism were characterized and analyzed by X-ray diffraction (XRD),transmission electron microscopy (TEM),atomic force microscope (AFM),ultraviolet visible spectros-copy (UV-Vis),and vibrating sample magnetometer (VSM).The results show that the films exhibit a hexa-gonal structure,showing a preferential growth along c axis.Any amorphous material or secondary phase was not inspected in all synthesized samples.It indicate that Zn2 + was substituted by Cu2 + in the crystal film.The roughness,the grain size,the transmittance,band gap and room magnetism of the films are improved by the changes of Cu consistence and sintering temperature.The sample of 2% Cu-doping sintered at 500 ℃ has the least roughness and grain sizes,and has the most transmittance and room temperature ferromagnetism.But the band gap decreases with the increase of Cu consistence and sintering temperature.

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