采用射频磁控溅射工艺，以高密度氧化锌铝陶瓷靶为靶材，衬底温度控制在室温，在玻璃基底上制备了透明导电 ZnO∶Al(ZAO)薄膜.利用 X 射线衍射仪(XRD)、原子力显微镜(AFM)、紫外-可见光谱仪和范德堡法，系统研究了不同溅射功率对薄膜的结构、形貌及光电特性的影响.结果表明，不同溅射功率对薄膜的光透射率影响不大，而对薄膜结晶和电学性能影响较大.XRD 表明薄膜为良好的 c 轴择优取向；可见光区(400~600 nm)平均透过率达到85％以上；在120 W 下沉积的薄膜电学性能达到了最佳.
ZnO∶Al (ZAO)transparent conductive thin films were sputtered on glass substrates by RF magne-tron sputtering with ZnO ceramic target mixed with Al2 O 3 of 2wt%.The influence of sputtering power on the structural,optical and electrical performance of ZAO films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM),UV-Vis spectrograph and Van der Pauw method.The results indicate that the different sputtering power has little influence on the light transmittance,but there are greater effects on film crystallization and electrical properties.c-axis orientation of ZAO films in (002 )direction was distinctly ob-served by XRD.The average visible (about 400-600 nm)transmittance was more than 85%.The optimum elec-trical property of ZAO film was prepared at sputtering power of 120 W.
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