采用离子束溅射技术,通过改变诱导量子点形成的C层生长温度,在n型Si(100)衬底上自组装生长了一系列Ge量子点。利用 AFM和 Raman光谱对样品的表面形貌和结构进行了表征。实验结果表明,当C层的温度从600℃升高到700℃时,Ge 量子点的密度逐渐降低,且结晶性变差；此时,量子点中的 Si 组分升高。当C层的生长温度从700℃升高到800℃过程中,Ge量子点的密度逐渐增大,结晶性也有所改善；此时,量子点中的Si含量降低。
A series of Ge quantum dot samples at different C-induced layer temperature were grown on n-Si(100) substrates by ion beam sputtering.Their morphology and structure were characterizated by AFM and Raman spectra.Results showed that when the growth temperature of C layer increased from 600 to 700 ℃,the density of the quantum dots decreased to a minimum and the crystalline became worse;the Si composition increased in quantum dots at the same time.When the growth temperature of C layer increased from 700 to 800 ℃,the den-sity of the quantum dots increases to a maximum and the crystalline turned better;while the composition of Si in Ge quantum dots reduced.
参考文献
| [1] | 王科范,刘金锋,刘忠良,徐彭寿,韦世强.Si（001）表面分子束外延生长的小尺寸Ge量子点[J].物理化学学报,2007(06):841-845. |
| [2] | S. Das;S. Manna;R. K. Singha;R. Aluguri;S. K. Ray .Effect of growth temperature and post-growth annealing on luminescence properties of molecular beam epitaxy grown single layer Ge quantum dots[J].Journal of Applied Physics,2013(6):063101-1-063101-8. |
| [3] | A.I. Nikiforov;VA Timofeev;S.A. Teys;A.K. Gutakovsky;O.P. Pchelyakov .Ge and Ge_xSi_(1-x) islands formation on Ge_xSi_(1-x)solid solution surface[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2012(8):3319-3321. |
| [4] | Densely packed Ge quantum dots grown on SiO_2/Si substrate[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2009(3):768. |
| [5] | 周志玉,周志文,李成,陈松岩,余金中,赖虹凯.Ge/Si（100）量子点生长与形态分布的研究[J].半导体光电,2008(02):220-225. |
| [6] | Hung-Chi Wu;Bi-Hsuan Lin;Huang-Chin Chen .One-Step Ge/Si Epitaxial Growth[J].ACS applied materials & interfaces,2011(7):2398-2401. |
| [7] | V.A. Shah;A. Dobbie;M. Myronov;D.R. Leadley .High quality relaxed Ge layers grown directly on a Si(0 0 1) substrate[J].Solid-State Electronics,2011(1):189-194. |
| [8] | H.-W. Kim;S. Choi;S. Hong;H. K. Jung;G.-D. Lee;E. Yoon;C. S. Kim .Effect of C incorporation on relaxation of SiGe/Si[J].Applied physics letters,2008(22):221902-1-221902-3-0. |
| [9] | 杨杰,王茺,陶东平,杨宇.束流密度对Ge/Si量子点溅射生长的影响[J].功能材料,2012(16):2239-2242,2246. |
| [10] | S. W. Lee;L. J. Chen;P. S. Chen;M.-J. Tsai;C. W. Liu;T. Y. Chien;C. T. Chia .Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si[J].Applied physics letters,2003(25):5283-5285. |
| [11] | K. Eberl;O. G. Schmidt;O. Kienzle;F. Ernst .Preparation and optical properties of Ge and C-induced Ge quantum dots on Si[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(1/2):164-169. |
| [12] | O. G. Schmidt;C. Lange;K. Eberl;O. Kienzle;F. Ernst .C-induced Ge dots: a versatile tool to fabricate ultra-small Ge nanostructures[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1998(1/2):248-251. |
| [13] | 肖胜安;季伟 .Si1-x-y GexCy 的淀积工艺和材料特性[J].半导体先进制造技术,2007,37(07):517-521. |
| [14] | A BERNARDI;J O OSSO;M I ALONSO .Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density[J].Nanotechnology,2006(10):2602-2608. |
| [15] | 段宝兴,杨银堂.利用Keating模型计算Si（1-χ）Geχ及非晶硅的拉曼频移[J].物理学报,2009(10):7114-7118. |
| [16] | Nakashima S.;Harima H. .RAMAN INVESTIGATION OF SIC POLYTYPES[J].Physica Status Solidi, A. Applied Research,1997(1):39-64. |
| [17] | Tan PH.;Brunner K.;Bougeard D.;Abstreiter G. .Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots - art. no. 125302[J].Physical review, B. Condensed matter and materials physics,2003(12):5302-0. |
| [18] | 盛箎;蒋最敏;陆昉.硅锗超晶格及低维量子结构[M].上海:上海科学技术出版社,2004:1-2. |
| [19] | 吴自勤;王兵.薄膜生长[M].北京:科学出版社,2001:123-124. |
| [20] | 张学贵,王茺,杨杰,潘红星,鲁植全,李亮,杨宇.温度对离子束溅射生长Ge/Si量子点的形貌影响[J].功能材料,2010(11):1982-1985. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%