石墨烯由于其独特的电学特性受到关注,工艺的研究促使石墨烯材料的实际应用。着重于石墨烯场效应管关键工艺(目标衬底的预处理、石墨烯的转移、金属沉积、石墨烯刻蚀与退火)的优化。通过实验发现,衬底上硅醇基的密度以及碳氢化合物分子的大小对器件的性能有很大的影响；与热蒸发方式相比,溅射会对石墨烯引入更多的缺陷,降低器件性能；金属上石墨烯的接触电阻率为1.1×104Ω·μm,而金属下石墨烯的电阻率为2.4×105Ω·μm；应用射频和微波等离子体系统对石墨烯进行刻蚀,微波等离子体会造成石墨烯上的光刻胶碳化,使得光刻胶很难用丙酮去除；器件制备完成后,样品需要在(H2/Ar)还原性气氛中退火,以除去吸附在石墨烯表面的杂质,提高器件的性能。
The process used to fabricate graphene field effect transistors (FETs)was optimized.Pretreatment of the targeted substrate,graphene transfer,metal deposition,graphene etching and annealing are all important factors in the fabrication process.The density of silanol groups and the size of the hydrocarbon on the surface of a substrate also influence the properties of the resulting devices.Metal deposition also can induce defects in gra-phene.Compared with thermal evaporation,sputtering induces a large amount of disorder in graphene,which degrades its properties.In addition,the method of graphene transfer,on-the-metal or under-the-metal gra-phene,influences its properties.In our experiments,the contact resistivity of on-the-metal graphene was 1.1× 104 Ω·μm,while that of under-the-metal graphene was 2.4×105 Ω·μm.RF and microwave plasma systems were used to etch graphene.Microwave plasma etching caused the photoresist on graphene to carbonize,and made it very difficult to remove with acetone.After fabrication,samples were annealed in a reducing (H2/Ar) atmosphere to remove residues adsorbed on the graphene surface and improve device properties.
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