采用直流磁控溅射法在不同衬底温度下(27、150、300、450和750℃)制备 Ta2 O5薄膜。利用X射线衍射、扫描电子显微镜(SEM)和紫外-可见光分光光度计对薄膜的结构、表面形貌和光学性质进行分析研究。实验结果表明,当衬底温度为450℃时,薄膜开始结晶。低于450℃,薄膜为无定形态,光学透过率随着衬底温度的升高而升高,在可见光区域最大透过率为85%。薄膜结晶生成晶粒,会对通过的光束产生散射,降低透过率,光学性能下降。这些结果说明衬底温度和薄膜材料的结构、结晶转变温度及光学性质密切相关。
Ta2 O5 thin films were prepared by reactive magnetron sputtering technique.The microstructure,mor-phology and optical properties of the films deposited at different substrate temperature were investigated by X-ray diffraction,scanning electron microscopy (SEM)and spectrophotometer.The Ta2 O5 thin film begin to crys-tallized when substrate temperature reach to 450 ℃.The films were amorphous when temperature was less than 450℃,and the transmittance of thin films would increase with the enhancing substrate temperature.The high-est transmittance during visible light region was 85%.In other hand,when the films were crystallization,they would produce a lot of crystalline particles,which would cause scattering,reduce the transmittance.The results showed that substrate temperature had a close relationship with the structure and crystalline properties and op-tical properties of the Ta2 O5 thin films.
参考文献
[1] | Cid M.;Brunetti C.;Beloto AF.;Ramos CAS.;Stem N. .Improvements in anti-reflection coatings for high-efficiency silicon solar cells[J].Surface & Coatings Technology,1998(2/3):117-120. |
[2] | Chaneliere C;Autran J L;Devine R A B .Tantalum pen-toxide(Ta2 O5)thin films for advanced dielectric applica-tions[J].Materials Science and Engineering,1998,22(06):269-322. |
[3] | Sheng-Chang Wang;Kuang-Yi Liu;Jow-Lay Huang .Tantalum oxide film prepared by reactive magnetron sputtering deposition for all-solid-state electrochromic device[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2011(5):1454-1459. |
[4] | Doumuki T;Tamada H;Saitoh M .Highly efficient cher-enkovtype second harmonic generation in a Ta2 O5/KTiO-PO4 waveguide[J].Applied Physics Letters,1994,64:3533-3535. |
[5] | CUI Yun,LIU Shi-Jie,HE Hong-Bo,ZHAO Yuan-An,SHAO Jian-Da,FAN Zheng-Xiu.Influence of Vacuum Organic Contaminations on Laser-Induced Damage of 1064 nm Anti-Reflective Coatings[J].中国物理快报(英文版),2007(10):2873-2875. |
[6] | Song Y Z;Sakurai T;Maruta K et al.Optical and struc-tural properties of dense SiO2,Ta2 O5 and Nb2 O5 thin films deposited by indirectly reactive sputtering technique[J].Vacuum,2000,59:755-763. |
[7] | Characterization of high quality tantalum pentoxide film synthesized by oxygen plasma enhanced pulsed laser deposition[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2009(1):94. |
[8] | Krishnan, RR;Nissamudeen, KM;Gopchandran, KG;Pillai, VPM;Ganesan, V .Effect of doping and substrate temperature on the structural and optical properties of reactive pulsed laser ablated tin oxide doped tantalum oxide thin films[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2010(10):1204-1211. |
[9] | M. Lukosius;C. Baristiran Kaynak;S. Kubotsch;T. Blomberg;G. Ruhl;Ch. Wenger .Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta_2O_5 Metal-Insulator-Metal capacitors[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2012(14):4576-4579. |
[10] | 黄蕙芬 .具有优良绝缘性能的Ta2 O5 介质膜[J].东南大学学报,1999,26:36-39. |
[11] | 闫志巧,熊翔,肖鹏,黄伯云.化学气相沉积法制备Ta2O5薄膜的研究进展[J].功能材料,2006(04):511-514. |
[12] | Hudner J.;Kusche D.;Ohlsen H.;Hellberg PE. .TANTALUM OXIDE FILMS ON SILICON GROWN BY TANTALUM EVAPORATION IN ATOMIC OXYGEN[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1996(1/2):415-418. |
- 下载量()
- 访问量()
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%