采用磁控溅射制备了 NiFeCr (4.5nm)/NiFe(10nm)/MgO(4.0nm)/Ta(5.0nm)薄膜,并对薄膜进行真空磁场退火。退火后薄膜磁电阻变化率显著提高,400℃退火后达到3.02%,之后随着退火温度的升高,磁电阻变化率下降。XRD 结果表明,薄膜不仅具有很强的 NiFe(111)织构,同时还出现了 MgO 的(111)衍射峰。随退火温度的升高,MgO(111)衍射峰的强度有所降低。
The NiFeCr(4.5nm)/NiFe(10nm)/MgO(4.0nm)/Ta(5.0nm)films were prepared by magnetic sput-tering and were annealed in a vacuum furnace with an applied plane field.The anisotropic magnetoresistance (AMR)increases dramatically after the annealing and it reaches to 3.02% after annealing at 400℃.After-wards,the AMR decreases with a further increase of the heating treatment temperature.The XRD results show that the perfect diffraction peak of NiFe(111)was well presented.At the same time the MgO(111)was presen-ted also and the intensity of the MgO(111)decreases with the increase of the heating treatment temperature.
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