采用酞菁铁高温热解方法在具有微立方结构的化学镀镍硅基底上生长了碳纳米管薄膜(Si/Ni-CNTs),并在20GW脉冲功率源系统中采用二板结构对其强流脉冲发射特性进行了研究.研究结果表明,在单脉冲发射条件下,随脉冲电场峰值的增大,Si/Ni-CNTs薄膜的发射电流峰值呈线性增加,当宏观场强达到31.4 V/μm时,发射脉冲电流的峰值可达到14.74kA,对应的发射电流密度1.23kA/cm2,在相同峰值,连续多脉冲情况下,碳纳米管薄膜具有良好的发射可重复性,且发射性能稳定.
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