叙述了大直径硅单晶生长,计算机数值模拟以及绝缘体上硅(SOI)、锗硅(SiGe)和应变硅等硅基材料的研究进展,讨论了硅中缺陷演化、杂质特性、缺陷工程和表面与界面质量控制,展望了后摩尔时代半导体硅及硅基材料的发展前景.
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