通过金属催化化学气相沉积法,采用四氯化硅作为硅源合成了棒状氧化硅纳米结构.对产物进行了场发射扫描电镜、透射电镜及附带X射线能谱仪的表征测试.生长工艺条件包括沉积位置、反应时间、氩气冲洗次数和基板对产物纳米结构的影响进行了探讨,其中前三者分别影响气相硅源的浓度、获取硅源的量和残余氧的浓度,而基板的成分和表面粗糙度对纳米结构的生长影响显著.
Rod-like silicon oxide nanostructures were grown via metal-catalyzed chemical vapor deposition method,using SiCl4 as Si source.The nanostructures were examined using field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) equipped with energy dispersive X-ray spectroscopy (EDX).The synthesis conditions including deposition location,reaction time,Ar-flushing times,and substrate on the growth of the nanostructures were investigated.The results show that the deposition location,reaction time and Ar-flushing times affect the concentration of Si vapor,quantities of obtained Si species and concentration of residual oxygen,respectively.The composition and surface roughness of the substrates significantly affect the growth of nanostructures.
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