真空蒸镀多晶硅薄膜工艺对其组织和性能的影响

表面技术 , 2011, 40(2): 83-85. doi: 10.3969/j.issn.1001-3660.2011.02.025

真空蒸镀多晶硅薄膜工艺对其组织和性能的影响

曹健 ^1, , 王宙 ^2, , 室谷贵之(日) ^3, , 付传起 ^4,

1.大连大学,表面工程中心,大连,116622

2.大连大学,表面工程中心,大连,116622

3.大连大学,表面工程中心,大连,116622

4.大连大学,表面工程中心,大连,116622

关键词：真空蒸镀 , 退火 , 多晶硅薄膜

Effect of Process of Polycrystalline Silicon Thin Films Prepared by Vacuum Evaporation on Organization and Performance

采用真空蒸镀并退火的方法制备多晶硅薄膜,采用透射电子显微镜对退火前后的样品进行了表征,通过原子力显微镜观察了薄膜的形貌,并测试了薄膜的耐压性能,分析了基板温度、基板距离和退火工艺对薄膜组织和性能的影响.实验结果表明:真空蒸镀所得薄膜为非晶硅薄膜,退火处理可使其多晶化,晶粒尺寸达0.5μm;基板温度120℃、基板距离60 mm为最佳工艺条件,采用该工艺所得多晶硅薄膜的耐压值可达384.2 V.

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真空蒸镀多晶硅薄膜工艺对其组织和性能的影响

Effect of Process of Polycrystalline Silicon Thin Films Prepared by Vacuum Evaporation on Organization and Performance

参考文献