报导了具有〈111〉晶向(轴向)的管状钼单晶基体化学气相沉积(CVD)钨单晶涂层的电解蚀刻工艺及形成的{110}晶面形貌.实验发现,通过电解蚀刻,表面的{110}晶面可以完全被蚀刻出来.蚀刻出来的{110}晶面呈台阶结构,并同〈111〉晶轴相平行.蚀刻出来的{110}晶面在圆管的表面分成均等六个区.每个区内{110}晶面的台阶面的宽度呈现周期性的变化,开始台阶面较宽,逐渐变窄,然后通过一过渡区后,进入下一周期,{110}晶面的台阶面的宽度又逐渐变宽.
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