采用化学法合成了乱层石墨结构B-C-N化合物,在不同温度下进行高温处理后,经X射线衍射(XRD)、透射电子显微镜(TEM)、高分辨电子显微镜(HREM)和X射线能谱(EDX)对合成产物的结构、晶体学参数、成分等进行分析.结果表明,处理温度对乱层石墨结构B-C-N化合物的晶化有较大影响.随处理温度增加,B-C-N化合物由乱层石墨结构向多晶体转变.1600℃处理后可以得到纯六方B-C-N多晶固溶体,晶格参数为a=0.251 mm,c=0.666 mm.EDX测定出晶化后B-C-N化合物的成分为B0.41C0.09N0.50.
参考文献
[1] | Liu A Y;Wentzovitch R M;Cohen M L .Atomic Arangement and Electronic Structure of BC2N[J].Physical Review B,1989,39:1760-1765. |
[2] | Masayuki Kawaguchi .B/C/N Materials Based on the Graphite Network[J].Advanced Materials,1997(8):615-625. |
[3] | Badzian A R;Appenheimer S;Niemyski T.Graphite-Boron-Nitride Solid Solutions by Chemical Vapor Deposition[M].Proceedings of the Third International Conference on CVD Salt Lake City,UT April 24 - 27,1972 Edited by F.A.Glaski American Nuclear Society,La Grange Park,IL,1972 |
[4] | Yu J.;Xu GC.;Wang EG. .Observations of micrometer BCN rods by bias-assisted hot-filament chemical vapor deposition[J].Chemical Physics Letters,1998(4-6):531-534. |
[5] | Fayeulle S;Nastasi M;Lu YC;Kung H;Tesmer JR .Thermal and ion irradiation stability of direct current sputtered TiN/B-C-N multilayers[J].Applied physics letters,1997(9):1098-1100. |
[6] | Perrone A.;Luches A.;Dinescu M.;Ghica C.;Sandu V. Andrei A.;Caricato AP. .Boron carbonitride films deposited by pulsed laser ablation[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1998(4):239-242. |
[7] | Hubacek M.;Sato T. .PREPARATION AND PROPERTIES OF A COMPOUND IN THE B-C-N SYSTEM[J].International Journal of Quantum Chemistry,1995(1):258-264. |
[8] | Knittle E;Kaner R B;Jeanloz R et al.High - pressure Synthesis,Characterization,and Equation of State of Cubic C -BN Solid Solutions[J].Physical Review B,1995,51:12149-12156. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%